Search results for "Scattering parameters"
showing 10 items of 11 documents
Proposal of Up-to-Date Standards on Methods of Measuring Noise Parameters of Microwave Transistors
1994
One of the most interesting topics for microrwave community is the characterization of low-noise transistors. After so many years, the Standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is here proposed as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.
Full characterization of low-noise HEMTs using only noise figure measurements
1993
A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. Selection of the optimum measuring conditions, all the steps of the experimental procedure, the data collecting and processing to derive all the parameters, are fully driven by an original (unpublished) software, even without the presence of an (unskilled) operator. Results are presented about the complete characterization of a series of ten pseudomorphicHEMTs in the 8-16 GHz range. The S-parameters are also compared with those measured by an ANA.
Noise and gain performance of PSA transistor series for personal communication systems vs. emitter number and operating conditions
1995
The booming market of communication system applications in the low microwave range put greater demands on the component performance at lower supply voltages and limited current consumption, as well as on production cost and integration level. In this work, we present the results of an extensive characterization activity carried out on several advanced polysilicon bipolar transistors as requested by the manufacturer. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scatterino parameters at different bias conditions. A comparative analysis has been performed to explore how the transistor perfo…
High-sensitivity narrow-band CSRR-based Microwave Sensor for Monitoring Glucose Level
2022
In this paper, a high-sensitivity narrow-band microwave sensor based on a complementary split-ring resonator (CSRR) to detect glucose concentrations in an aqueous solution is presented. The sensor consists of three CSRR cells engraved on the bottom level of a 59 mm x 20 mm x 0.8 mm FR4 (εr=4.3) dielectric substrate with a sensing area of 36 x 20 mm2. The cells operate over the 2.3 - 2.4 GHz band and are powered by a 50 Ω microstrip waveguide at the bottom of the substrate. A sensitivity analysis, starting from an optimization of the thickness of the glass layer added to the cells to avoid short circuits between the sample solution and the CSRRs rings, is performed. The sensitivity analysis …
Modeling of low-noise microwave HEMTs for CAD-oriented applications
1993
The simultaneous determination of noise, gain and scattering parameters through a computer-driven noise figure measuring system allowed the rapid and accurate characterization of several samples of low noise HEMTs of the same family. From the measured parameters an equivalent circuit model representing the behavior of the typical device is extracted by means of a decomposition approach. Comparison between the model performance and the set of measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is mainly oriented to the CAD of (M)MIC low noise wideband amplifiers. © 1993 John Wiley & Sons, Inc.
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.
Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.
Reference-Plane Invariant Method for Measuring Electromagnetic Parameters of Materials
2010
This paper presents a simple and effective wideband method for the determination of material properties, such as the complex index of refraction and the complex permittivity and permeability. The method is explicit (non-iterative) and reference-plane invariant: it uses a certain combination of scattering parameters in conjunction with group-velocity data. This technique can be used to characterize both dielectric and magnetic materials. The proposed method is verified experimentally within a frequency range between 2 to 18 GHz on polytetrafluoroethylene and polyvinylchloride samples. A comprehensive error and stability analysis reveals that, similar to other methods based on transmission/re…
EXTRACTION OF ΛΛ SCATTERING LENGTH
2009
We determine ΛΛ scattering parameters from a ΛΛ invariant mass spectrum that was obtained by 12 C (K-, K+ΛΛ) reaction at the KEK Proton Synchrotron. In the framework of Watson's procedure, the obtained scattering length [Formula: see text] and effective range [Formula: see text] are most consistent with the values predicted by using the Nijmegen soft core models (NSC97's). However, the predicted values by using the Nijmegen hard-core ND ( G -matrix) and the extended soft-core (ESC00) models are out of two standard deviations from the determined scattering parameters.